Erratum: “Analysis of plasma-modes of a gated bilayer system in high electron mobility transistors” [J. Appl. Phys. 119, 193102 (2016)]
Article
Bhardwaj, Shubhendu, Rajan, Siddharth, Volakis, John L. (2016). Erratum: “Analysis of plasma-modes of a gated bilayer system in high electron mobility transistors” [J. Appl. Phys. 119, 193102 (2016)]
. JOURNAL OF APPLIED PHYSICS, 120(4), 049901. 10.1063/1.4960091
Bhardwaj, Shubhendu, Rajan, Siddharth, Volakis, John L. (2016). Erratum: “Analysis of plasma-modes of a gated bilayer system in high electron mobility transistors” [J. Appl. Phys. 119, 193102 (2016)]
. JOURNAL OF APPLIED PHYSICS, 120(4), 049901. 10.1063/1.4960091