Erratum: “Analysis of plasma-modes of a gated bilayer system in high electron mobility transistors” [J. Appl. Phys. 119, 193102 (2016)] Article

Bhardwaj, Shubhendu, Rajan, Siddharth, Volakis, John L. (2016). Erratum: “Analysis of plasma-modes of a gated bilayer system in high electron mobility transistors” [J. Appl. Phys. 119, 193102 (2016)] . JOURNAL OF APPLIED PHYSICS, 120(4), 049901. 10.1063/1.4960091

cited authors

  • Bhardwaj, Shubhendu; Rajan, Siddharth; Volakis, John L

authors

publication date

  • July 28, 2016

published in

keywords

  • 51 Physical Sciences
  • 5104 Condensed Matter Physics

Digital Object Identifier (DOI)

publisher

  • AIP Publishing

start page

  • 049901

volume

  • 120

issue

  • 4