Growth of (100) orientation diamond film deposited by MWPCVD methods using the gaseous mixtures of CH4, CO and H2 Conference

Gu, CZ, Jin, ZS, Wang, CL et al. (1998). Growth of (100) orientation diamond film deposited by MWPCVD methods using the gaseous mixtures of CH4, CO and H2 . DIAMOND AND RELATED MATERIALS, 7(6), 765-768. 10.1016/S0925-9635(97)00299-9

International Collaboration

cited authors

  • Gu, CZ; Jin, ZS; Wang, CL; Zou, GT; Sakamoto, Y; Takaya, M

authors

date/time interval

  • August 3, 1997 -

publication date

  • June 1, 1998

published in

keywords

  • CHEMICAL-VAPOR-DEPOSITION
  • CO
  • Materials Science
  • Materials Science, Coatings & Films
  • Materials Science, Multidisciplinary
  • NITROGEN
  • Physical Sciences
  • Physics
  • Physics, Applied
  • Physics, Condensed Matter
  • SILICON
  • Science & Technology
  • Technology
  • diamond film
  • texture

Location

  • SCOTLAND, EDINBURGH

Digital Object Identifier (DOI)

Conference

  • Diamond 97 Conference

publisher

  • ELSEVIER SCIENCE SA

start page

  • 765

end page

  • 768

volume

  • 7

issue

  • 6