Fabrication and properties of lateral p-i-p structures using single-crystalline CVD diamond layers for high electric field applications Article

Irie, M, Endo, S, Wang, CL et al. (2003). Fabrication and properties of lateral p-i-p structures using single-crystalline CVD diamond layers for high electric field applications . Diamond and Related Materials, 12(9), 1563-1568. 10.1016/S0925-9635(03)00243-7

cited authors

  • Irie, M; Endo, S; Wang, CL; Ito, T

authors

publication date

  • September 1, 2003

published in

keywords

  • AFFINITY
  • CVD
  • DEFECTS
  • DIODE
  • EMISSION
  • EMITTERS
  • GROWTH
  • Materials Science
  • Materials Science, Coatings & Films
  • Materials Science, Multidisciplinary
  • Physical Sciences
  • Physics
  • Physics, Applied
  • Physics, Condensed Matter
  • SILICON
  • SPECTROSCOPY
  • SURFACE
  • Science & Technology
  • Technology
  • VAPOR-DEPOSITED DIAMOND
  • diamond films
  • electrical properties
  • impact ionization

Digital Object Identifier (DOI)

start page

  • 1563

end page

  • 1568

volume

  • 12

issue

  • 9