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Band Gap of Semiconducting High Pressure Phase of Boron
Conference
Chen, J, Liang, X, Yang, B
et al
. (2016). Band Gap of Semiconducting High Pressure Phase of Boron .
172-180.
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Chen, J, Liang, X, Yang, B
et al
. (2016). Band Gap of Semiconducting High Pressure Phase of Boron .
172-180.
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International Collaboration
Overview
Research
Location
Additional Document Info
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Overview
cited authors
Chen, J; Liang, X; Yang, B; Girard, J; Drozd, V; Liu, Z
authors
Chen, Jiuhua
Drozd, Vadym
date/time interval
August 5, 2016 -
publication date
January 1, 2016
Research
keywords
Band Gap
Boron
ELEMENTAL BORON
Engineering
Engineering, Civil
FORM
GAMMA-BORON
High Pressure
Materials Science
Materials Science, Multidisciplinary
OPTICAL-PROPERTIES
RHOMBOHEDRAL BORON
Science & Technology
Semiconductor
Technology
gamma-B-28
Location
Location
PEOPLES R CHINA, Guilin
Additional Document Info
Conference
International Conference on Material Science and Civil Engineering (MSCE)
publisher
DESTECH PUBLICATIONS, INC
start page
172
end page
180