Band Gap of Semiconducting High Pressure Phase of Boron Conference

Chen, J, Liang, X, Yang, B et al. (2016). Band Gap of Semiconducting High Pressure Phase of Boron . 172-180.

International Collaboration

cited authors

  • Chen, J; Liang, X; Yang, B; Girard, J; Drozd, V; Liu, Z

authors

date/time interval

  • August 5, 2016 -

publication date

  • January 1, 2016

webpage

keywords

  • Band Gap
  • Boron
  • ELEMENTAL BORON
  • Engineering
  • Engineering, Civil
  • FORM
  • GAMMA-BORON
  • High Pressure
  • Materials Science
  • Materials Science, Multidisciplinary
  • OPTICAL-PROPERTIES
  • RHOMBOHEDRAL BORON
  • Science & Technology
  • Semiconductor
  • Technology
  • gamma-B-28

Location

  • Guilin, PEOPLES R CHINA

Conference

  • International Conference on Material Science and Civil Engineering (MSCE)

publisher

  • DESTECH PUBLICATIONS, INC

start page

  • 172

end page

  • 180