Structural characterization of epitaxial Cd1-xZnxTe semiconductor thin films by ion beam techniques Article

Fernandez-Lima, F, Larramendi, EM, Puron, E et al. (2003). Structural characterization of epitaxial Cd1-xZnxTe semiconductor thin films by ion beam techniques . JOURNAL OF CRYSTAL GROWTH, 253(1-4), 89-94. 10.1016/S0022-0248(03)01023-6

International Collaboration

cited authors

  • Fernandez-Lima, F; Larramendi, EM; Puron, E; Pedrero, E; de Melo, O; Baptista, DL; Zawislak, FC

authors

publication date

  • June 1, 2003

webpage

published in

keywords

  • (100)GAAS
  • ATOMIC LAYER EPITAXY
  • BACKSCATTERING
  • CLOSED SPACE SUBLIMATION
  • Crystallography
  • GROWTH
  • Materials Science
  • Materials Science, Multidisciplinary
  • Physical Sciences
  • Physics
  • Physics, Applied
  • REFLECTION MASS-SPECTROMETRY
  • STRAIN
  • Science & Technology
  • Technology
  • VAPOR-PHASE EPITAXY
  • ZNTE EPILAYERS
  • alloys
  • characterization
  • semiconducting II-VI materials
  • vapor phase epitaxy

Digital Object Identifier (DOI)

publisher

  • ELSEVIER SCIENCE BV

start page

  • 89

end page

  • 94

volume

  • 253

issue

  • 1-4