Modeling of RTD-gated GaN HEMTs at Terahertz frequencies using a full-wave simulation toolset coupled with particle-based equations
Conference
Tenneti, S, Nahar, NK, Volakis, JL. (2014). Modeling of RTD-gated GaN HEMTs at Terahertz frequencies using a full-wave simulation toolset coupled with particle-based equations
. 10.1109/USNC-URSI-NRSM.2014.6927956
Tenneti, S, Nahar, NK, Volakis, JL. (2014). Modeling of RTD-gated GaN HEMTs at Terahertz frequencies using a full-wave simulation toolset coupled with particle-based equations
. 10.1109/USNC-URSI-NRSM.2014.6927956
Terahertz devices can be used for a variety of applications, including secure communications, imaging, radar, and radio astronomy. The demand for higher frequency devices has compelled designers to scale device dimensions down to a point where a trial-and-error approach in fabrication can no longer be used. Instead, device optimization via simulations has become vitally important to reduce time and production costs involved. Although many simulation models exist for microwave transistors, modeling them at terahertz frequencies comes with new challenges, as quantum and electromagnetic wave effects that could once be neglected become limiting factors in device performance. This requires the development of more complete toolsets that can describe the inherent electromagnetic nature and associated wave effects. Specifically, modeling of terahertz devices must include full wave electromagnetic modeling along with all relevant semiconductor device physics.
