Full-wave modeling of THz RTD-gated GaN HEMTs Article

(2015). Full-wave modeling of THz RTD-gated GaN HEMTs . Infrared Physics and Technology, 72 -228. 10.1016/j.infrared.2015.07.017

sustainable development goals

authors

publication date

  • September 1, 2015

published in

keywords

  • Field effect transistors
  • HEMTs
  • Optics
  • Physics
  • Resonant tunneling devices
  • Science & Technology
  • THz devices
  • TRANSISTORS
  • Technology

Digital Object Identifier (DOI)

end page

  • 228

volume

  • 72