Full-wave modeling of THz RTD-gated GaN HEMTs Article

Tenneti, Sai N, Nahar, Niru K, Volakis, John L. (2015). Full-wave modeling of THz RTD-gated GaN HEMTs . Infrared Physics and Technology, 72 221-228. 10.1016/j.infrared.2015.07.017

cited authors

  • Tenneti, Sai N; Nahar, Niru K; Volakis, John L

sustainable development goals

authors

publication date

  • September 1, 2015

published in

keywords

  • Field effect transistors
  • HEMTs
  • Instruments & Instrumentation
  • Optics
  • Physical Sciences
  • Physics
  • Physics, Applied
  • Resonant tunneling devices
  • SIMULATION
  • Science & Technology
  • THz devices
  • TRANSISTORS
  • Technology

Digital Object Identifier (DOI)

publisher

  • ELSEVIER

start page

  • 221

end page

  • 228

volume

  • 72