Plastic deformation of silicon between 20 °C and 425 °C Conference

Rabier, J, Renault, PO, Eyidi, D et al. (2007). Plastic deformation of silicon between 20 °C and 425 °C . 4(8), 3110-+. 10.1002/pssc.200675480

International Collaboration

cited authors

  • Rabier, J; Renault, PO; Eyidi, D; Demenet, JL; Chen, J; Couvy, H; Wang, L

authors

date/time interval

  • September 17, 2006 -

publication date

  • January 1, 2007

keywords

  • DISLOCATIONS
  • Engineering
  • Engineering, Electrical & Electronic
  • PRESSURE
  • Physical Sciences
  • Physics
  • Physics, Condensed Matter
  • SI
  • Science & Technology
  • TEMPERATURES
  • Technology

Location

  • GERMANY, Halle

Digital Object Identifier (DOI)

Conference

  • International Conference on Extended Defects in Semiconductors (EDS 2006)

publisher

  • WILEY-V C H VERLAG GMBH

start page

  • 3110

end page

  • +

volume

  • 4

issue

  • 8