Plastic deformation of silicon between 20 °C and 425 °C Conference

Rabier, J, Renault, PO, Eyidi, D et al. (2007). Plastic deformation of silicon between 20 °C and 425 °C . 4(8), 3110-3114. 10.1002/pssc.200675480

cited authors

  • Rabier, J; Renault, PO; Eyidi, D; Demenet, JL; Chen, J; Couvy, H; Wang, L



  • Mechanical data have been obtained on silicon single crystal under hydrostatic pressure between room temperature and 450°C. This temperature domain corresponds to the regime where perfect dislocations control plastic deformation. This was achieved using a D-DIA apparatus in the synchrotron beam of NSLS. Stress strain curves were deduced from X Ray diffraction and sample imaging under 5 GPa and a strain rate of 2.5 10-5 s-1. Yield stresses as a function of temperature exhibit different temperature dependence when deformation is controlled by perfect dislocations. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.

publication date

  • December 1, 2007

Digital Object Identifier (DOI)

start page

  • 3110

end page

  • 3114


  • 4


  • 8