Effect of temperature on impedance behavior of insulation layer in a HTS MEMS switch for RF applications Conference

Hijazi, Y, Bogozi, A, Brzhezinskaya, M et al. (2005). Effect of temperature on impedance behavior of insulation layer in a HTS MEMS switch for RF applications . IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 15(2), 952-955. 10.1109/TASC.2005.850133

cited authors

  • Hijazi, Y; Bogozi, A; Brzhezinskaya, M; Martinez, J; Burke, J; Noel, J; Vlassov, YA; Larkins, GL

authors

date/time interval

  • October 3, 2004 -

publication date

  • June 1, 2005

webpage

published in

keywords

  • BaTiO3
  • Engineering
  • Engineering, Electrical & Electronic
  • HTS
  • MEMS
  • Physical Sciences
  • Physics
  • Physics, Applied
  • SHUNT SWITCH
  • Science & Technology
  • Technology
  • YBa2Cu3O7

Location

  • Jacksonville, FL

Digital Object Identifier (DOI)

Conference

  • 2004 Applied Superconductivity Conference

publisher

  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

start page

  • 952

end page

  • 955

volume

  • 15

issue

  • 2