Growth of silica nanowires catalysed by Pd ion-implantation into Si (100) Conference

Sekhar, PK, Sood, DK, Bhansali, S. (2005). Growth of silica nanowires catalysed by Pd ion-implantation into Si (100) . 900 69-74. 10.1557/proc-0900-o03-14

cited authors

  • Sekhar, PK; Sood, DK; Bhansali, S

authors

abstract

  • Selective synthesis of silica nanowires on silicon wafers catalyzed by Pd ion implantation is reported.Nanoclusters of palladium suicide acts as seeds for nucleation of wires following a Vapor-Liquid-Solid (VLS) growth model. The consumption of silicide towards nanowire growth is confirmed through Rutherford Backscattcring Spectrometry (RBS). The influence of growth time, implantation dose and heating temperature on the structure and morphology of the wires is investigated. Optimization of these tunable parameters would be needed to facilitate controlled and directed bottom-up growth of silica nanowires. Such selective synthesis may enable a large number of applications in wide areas of future technologies such as localization of light, low dimensional waveguides for functional microphotonics, scanning near field optical microscopy (SNOM), optical interconnects, sacrificial templates, optical transmission antennae and biosensors. © 2006 Materials Research Society.

publication date

  • January 1, 2005

Digital Object Identifier (DOI)

start page

  • 69

end page

  • 74

volume

  • 900