Fabrication and characterization of thin-film metal-insulator-metal diode for use in rectenna as infrared detector Conference

Krishnan, S, Bhansali, S, Buckle, K et al. (2006). Fabrication and characterization of thin-film metal-insulator-metal diode for use in rectenna as infrared detector . 935 26-33. 10.1557/proc-0935-k03-18

cited authors

  • Krishnan, S; Bhansali, S; Buckle, K; Stefanakos, E

authors

abstract

  • Planar, asymmetric, thin-film Ni-NiO-Cr metal-insulator-metal (MIM) diodes with 1μm2 contact area were fabricated using E-beam lithography with cut-off frequency in the millimeter-wave regime (0.1THz). The electrical behavior of the detector was observed and verified with a theoretical model. By measuring the I-V characteristics of the diode, a higher degree of non-linearity was demonstrated. For devices with such non-linear electrodes, excellent agreement is obtained between measured and calculated results with current ranging from 0.8mA to 0.2mA at 0.2V. © 2006 Materials Research Society.

publication date

  • January 1, 2006

Digital Object Identifier (DOI)

start page

  • 26

end page

  • 33

volume

  • 935