Silicon nanowire integrated electrolyte-insulator-semiconductor sensor with an above-nernstian sensitivity for bio-sensing applications Conference

Oh, JY, Jang, HJ, Cho, WJ et al. (2012). Silicon nanowire integrated electrolyte-insulator-semiconductor sensor with an above-nernstian sensitivity for bio-sensing applications . Materials Research Society Symposium - Proceedings, 1439 127-132. 10.1557/opl.2012.1152

cited authors

  • Oh, JY; Jang, HJ; Cho, WJ; Pala, N; Islam, MS

authors

abstract

  • Highly sensitive electrolyte-insulator-semiconductor (EIS) sensors were realized by the integration of Si nanowires (NWs), which were fabricated by using a simple and economic electroless wet etching technique. EIS sensors with NWs longer than 1 μm were observed to have considerably increased capacitance and high pH sensitivity. The pH sensitivity of the EIS sensor with 3.8 μm long NWs was 60.2 mV/pH, which is higher than the theoretical Nernstian of 59 mV/pH. The EIS sensors with NWs exhibited slightly worse pH hysteresis and drift properties than that of the conventional planar type EIS sensor. The increases in pH sensitivity, hysteresis and drift are attributable to the extended surface area of the EIS sensors enabled by the NWs. © 2012 Materials Research Society.

publication date

  • December 28, 2012

published in

Digital Object Identifier (DOI)

start page

  • 127

end page

  • 132

volume

  • 1439