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Development of Hysteresis-Free, High-Performance Carbon Nanotube FET.
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Development of Hysteresis-Free, High-Performance Carbon Nanotube FET. .
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Development of Hysteresis-Free, High-Performance Carbon Nanotube FET. .
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Overview
Overview
date/time interval
April 1, 2007 - June 30, 2010
awarded by
Samsung Advanced Institute of Technology
administered by
Mechanical and Materials Engineering
sponsor award ID
Research and Development Agreement
